Blf178p datasheet
WebA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 128 MHz) WebObjective data sheet Rev. 1 — 5 April 2011 4 of 10 NXP Semiconductors BLF178P Power LDMOS transistor Table 7. RF characteristics 6.1 Ruggedness in class-AB operation The BLF178P is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS =50V; IDq =40mA; P L = 1200 W …
Blf178p datasheet
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WebBLF178P Datasheet by Ampleon USA Inc. View All Related Products Download PDF Datasheet. ANVlPLEON 1. Product profile. 1.1 General description. A 1200 W LDMOS power transistor f or broadcast applications and i ndustrial appl ications . in the HF to 1 10 MHz band. 1.2 Features and benefits WebData sheet: 2015-12-07: Mounting and Soldering of RF transistors in Air Cavity Packages Application note: 2024-09-15: RF Power solutions for Broadcast, Navigation and Safety Radio, Industrial, Scientific and …
WebRequest NXP Semiconductors BLF178P: A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band online from Elcodis, view and download BLF178P pdf datasheet, NXP Semiconductors specifications. Page 11. WebBLF178P Download datasheet . BLF178P Download datasheet . Overview Product details Recommended line-up Quality Ordering Documentation Design support ... BLF178P,112 (9340 656 54112) Pinning info. Pin Symbol Description Simplified outline Graphic symbol; 1 D1 drain1 2 D2 drain2 3 G1
WebBLF178P NXP Semiconductors,BLF178P Datasheet.Rohs Code:Yes,Part Life Cycle Code:Transferred,Ihs Manufacturer:NXP SEMICONDUCTORS,Package Description:ROHS COMPLIANT ... WebBLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 Product data sheet ... Product data sheet Rev. 2 — 16 February 2012 9 of 13 NXP Semiconductors BLF178P …
WebBLF177 MOSFET. Datasheet pdf. Equivalent Type Designator: BLF177 Type of Transistor: LDMOS Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage Vds : 50 V Maximum Drain Current Id : 16 A Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm Package: SOT121B
WebRequest NXP Semiconductors BLF178P: A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band online from Elcodis, view and download BLF178P pdf datasheet, NXP Semiconductors specifications. Page 3. semi final world cup 2022 ballWebBLF178P Product details. General description. A 1200 W LDMOS power transistor for broadcast applications and industrial applications. in the HF to 110 MHz band. Features … semi final thomas cup 2022WebBuy BLF178P,112 NXP , Learn more about BLF178P,112 Transistors RF MOSFET Power PWR LDMOS TRANSISTOR 1200W LDMOS, View the manufacturer, and stock, and datasheet pdf for the BLF178P,112 at Jotrin Electronics. semi final thomas cupWebBLF178P Datasheet RF Manual 16th edition - NXP Semiconductors BLF178P_15 Power LDMOS transistor semi final world cup 2022 fixturesWebAmpleon's BLF178P is trans rf mosfet n-ch 110v 88a 5-pin sot-539a in the fet transistors, rf fets category. Check part details, parametric & specs updated 15 OCT 2024 and … semi final world cup 2022 liveWebDesigned for FM radio transmitters, this amplifier uses a pair of BLF178P push-pull transistors to produce a minimum 1800watts! 87.5-108MHz 43 - 50Volts. Input/Output 50 ohms. Pout 1800W with 4W input. 25dB gain … semi final world cup ballWebBLF178P#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 … semi final tickets world cup